K9F2G08U0M DATASHEET PDF

K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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A page program cycle consists of a serial data loading period in which up to bytes X8 device or words X16 device of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. Therefore, the system must be able to recognize the invalid block s based on the original invalid block information and create the invalid block table via the following suggested flow chart Figure 3.

K9F2G08U0M – PS3 Developer wiki

Any intentional erasure of the original invalid block information is prohibited. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement.

Block address loading is k9g2g08u0m in three cycles initiated by an Erase Setup command 60h. Page 35 Draft Date Sep. Refer to Figure 15 below. Optical Inspection Equipment AA In Block Erase operation, however, only the three row address cycles are used.

Power-On Auto Read mode is available only on 3. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. RE or CE does not need to be toggled for updated status. When the device is in the Busy state, CE high is ignored, and k9f2g8u0m device does not return to standby mode in program or erase operation.

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PRE pin controls activation of autopage read function. Only the Read Status command and Reset command are valid while programming is in progress. Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device.

Since the invalid block information is also erasable in most cases, it j9f2g08u0m impossible to recover the information once it has been erased. The information regarding the invalid block s is so called as the invalid block information. If reset command FFh is written at Ready state, the device goes into Busy for maximum 5us.

But if the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors. The internal byte X8 device or word X16 device data registers are utilized as separate buffers for this operation and the system design gets more flexible.

K9F2G08U0M-PCB0

AC Waveforms for Power Transition 1. Figure 13 details the sequence.

Device operations are selected by writing specific commands into the command register. Random data output can be operated multiple times regardless of how many times it is done in a page.

An invalid block s does not affect the performance of valid block s because it is isolated from the bit line and the common source line by a select transistor. The column address for the next data, which will be entered, may be changed to the address which follows random data input command 85h. If the device is already in reset state a new reset command will be accepted by the command register.

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The program performance may be dramatically improved by cache program when there are lots of pages of data to be programmed. The random read mode is enabled when the page address is changed. Devices with invalid block s have the same quality level as devices with all valid blocks and have the same AC and DC characteristics.

Random data input may be operated multiple times regardless of how many times it is done in a page. This operation is also initiated by writing 00hh to the command register along with five address cycles.

The command register remains in Status Read mode until further commands are issued to it. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. In the case of status read failure after erase or program, block replacement should be done. The device provides cache program in a block. The invalid block s status is defined by the 1st datasheey X8 device or 1st word X16 device in the spare area.

Refer to k9f2b08u0m 3 for device status after reset operation.